Home > SiC Substrate >

SIC Crystal Silicon Carbide Wafer

Product Categories

SHANGHAI FAMOUS TRADE CO.,LTD

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

SIC Crystal Silicon Carbide Wafer

Name: SIC Crystal Silicon Carbide Wafer
Brand: zmsh
Price: 1 USD

Wholesale SIC Crystal Silicon Carbide Wafer from china suppliers

Brand Name : zmsh

Model Number : 6inch seed wafers

Certification : ISO9001

Place of Origin : china

MOQ : 3PCS

Price : by case

Payment Terms : T/T

Delivery Time : 30days within

Packaging Details : by customized case

industry : semiconductor substrate

materials : sic crystal

application : Seed wafers

Type : 4H-N,

color : green,blue, white

hardeness : 9.0 up

grade : Prime/Production

thickness : 153mm

Contact Now

6inch production prime SIC crystal Silicon Carbide seed Wafer 0.6mm Thickness for sic growth

6inch sic substrates, sic ingot sic crystal ingots sic crystal block sic semiconductor substrates 2inch 3inch 4inch 6inch 4h no doped wafer

we can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2 -6inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .

1.material application and advantagement

Applications:

• GaN epitaxy device
• Optoelectronic device
• High frequency device
• High power device
• High temperature device
• Light emitting diodes

• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap

SILICON CARBIDE MATERIAL PROPERTIES
Polytype	Single Crystal 4H	Single Crystal 6H
Lattice Parameters	a=3.076 Å	a=3.073 Å
Lattice Parameters	c=10.053 Å	c=15.117 Å
Stacking Sequence	ABCB	ABCACB
Band-gap	3.26 eV	3.03 eV
Density	3.21 · 103 kg/m3	3.21 · 103 kg/m3
Therm. Expansion Coefficient	4-5×10-6/K	4-5×10-6/K
Refraction Index	no = 2.719	no = 2.707
Refraction Index	ne = 2.777	ne = 2.755
Dielectric Constant	9.6	9.66
Thermal Conductivity	490 W/mK	490 W/mK
Break-Down Electrical Field	2 – 4 · 108 V/m	2 – 4 · 108 V/m
Saturation Drift Velocity	2.0 · 105 m/s	2.0 · 105 m/s
Electron Mobility	800 cm2/V·S	400 cm2/V·S
hole Mobility	115 cm2/V·S	90 cm2/V·S
Mohs Hardness	~9

2. Material Size describtion

3.productes

SIC Crystal Silicon Carbide Wafer

FAQ:

Q: What's your MOQ and delivery time?

A: (1) For inventory, the MOQ is 3pcs. if 5-10pcs it's better in 10-30days

(2) For 6inch customized products, the MOQ is 10pcs up in 30-50days

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, EMS etc.

(2) it is fine If you have your own express account ,If not,we could help you ship them and Freight is in accordance with the actual settlement.

Q: How to pay?

A: T/T, 100％

Q: Do you have standard products?

A:there are not 6inch Our standard products in stock.

but as like substrates 4inch 0.33mm 2sp thickness have some in stock

Thanks~~~

Product Tags: