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Brand Name : zmsh
Place of Origin : China
MOQ : 5
Price : 45
Payment Terms : Western Union, T/T
Supply Ability : 3000per month
Delivery Time : 3-5weeks
Packaging Details : Foam Cushion Carrier Box + Carton box
Model Number : 8'' Dia 200mm±0.2mm Thickness 725Um
Certification : rohs
Material : >99.99% Sapphire Crystal
Diameter : 200mm±0.2mm
Thickness : 725±25um
Orientation : C-Plane <0001>
TTV : ≤15um
WRAP : ≤30um
BOW : -30~10um
8" Sapphire Wafer 200mm Diameter (±0.2mm), 725µm Thickness, C-Plane SSP,DSP
This high-purity 8-inch (200mm) sapphire wafer features exceptional dimensional precision (±0.2mm diameter, 725µm thickness) and crystallographic orientation (C-plane), making it ideal for demanding optoelectronic and semiconductor applications. With 99.99% purity and superior mechanical/thermal stability, the wafer serves as an optimal substrate for LED, laser diode, and RF device fabrication. Its uniform surface finish and chemical inertness ensure reliability in harsh environments, while its large diameter supports cost-effective mass production.
Key Features of Sapphire Wafers
Sapphire Wafer's Precision Geometry:
Sapphire Wafer's Ultra-High Purity:
Sapphire Wafer's Robust Material Properties:
Sapphire Wafer's Surface Quality:
Applications of Sapphire Wafers images
Sapphire wafer in Optoelectronics:
Substrate for blue/green/white LEDs (InGaN/GaN epitaxy).
Laser diodes (edge-emitting/VCSELs) in displays and communications.
Sapphire wafer in Power Electronics:
RF devices (5G/6G antennas, power amplifiers) due to low dielectric loss.
High-electron-mobility transistors (HEMTs) for electric vehicles.
Sapphire wafer in Industrial & Defense:
IR windows, missile domes (sapphire’s transparency to mid-IR).
Protective covers for sensors in corrosive/abrasive environments.
Sapphire wafer in Emerging Technologies:
Quantum computing (SPD crystal substrates).
Wearable device screens (scratch-resistant covers).
Specifications
Parameter | Value |
---|---|
Diameter | 200mm ±0.2mm |
Thickness | 725µm ±25µm |
Orientation | C-plane (0001) ±0.2° |
Purity | >99.99% (4N) |
Surface Roughness (Ra) | <0.3nm (epi-ready) |
TTV | ≤15um |
WARP | ≤30um |
BOW | -30~10um |
Factory Equipments
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Sapphire Wafer 8'' Dia 200mm±0.2mm Thickness 725Um C-Plane SSP,DSP hardness9.0 Images |