SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type
Features of 4H-N SiC
- Use SiC Monocrystal to manufacture
- Support customized ones with design artwork
- Exceptional performance, wide bandgap and high electron mobility
- Superior Hardness, 9.2 Mohs scale for scratch resistance
- Widely used in technology sectors such as power electronics, LEDs, and sensors.
About 4H-N SiC
SiC substrate refers to a wafer made of silicon carbide (SiC), which is a wide-bandgap semiconductor material that has excellent electrical and thermal properties.
SiC substrates are commonly used as a platform for the growth of epitaxial layers of SiC or other materials, which can be used to fabricate various electronic and optoelectronic devices, such as high-power transistors, Schottky diodes, UV photodetectors, and LEDs.
SiC substrates are preferred over other semiconductor materials, such as silicon, for high-power and high-temperature electronics applications due to their superior properties, including higher breakdown voltage, higher thermal conductivity, and higher maximum operating temperature.
SiC devices can operate at much higher temperatures than silicon-based devices, making them suitable for use in extreme environments, such as in automotive, aerospace, and energy applications.
*Further details are following:
| Grade | Production Grade | Dummy Grade |
| Diameter | 150.0 mm +/- 0.2 mm |
| Thickness | 500 um +/- 25 um for 4H-SI350 um +/- 25 um for 4H-N |
| Wafer Orientation | On axis: <0001> +/- 0.5 deg for 4H-SIOff axis: 4.0 deg toward <11-20> +/-0.5 deg for 4H-N |
| Micropipe Density (MPD) | 5 cm-2 | 30 cm-2 |
| Doping Concentration | N-type: ~ 1E18/cm3SI-type (V-doped): ~ 5E18/cm3 |
| Primary Flat (N-type) | {10-10} +/- 5.0 deg |
| Primary Flat Length (N-type) | 47.5 mm +/- 2.0 mm |
| Notch (Semi-Insulating type) | Notch |
| Edge exclusion | 3 mm |
| TTV /Bow /Warp | 15um /40um /60um |
| Surface Roughness | Polish Ra 1 nm |
| CMP Ra 0.5 nm on the Si face |
More samples
*We also accept customization if you have furthermore needs.
Other SiC products recommend
1. Silicon Carbide Wafer 2inch 4inch 6inch 8inch Industrial Use With Surface Roughness ≤0.2nm
2. 2sp 4H-SEMI 4H-N SIC Silicon Carbide Wafer 10 X 10 X 0.5mm
FAQ about 4H-N SiC
1. Q: What is the difference between 4H-N SiC and 4H-Semi SiC
A: 4H-N SiC is a high-purity, undoped silicon carbide with superior electrical performance suited for high-power and high-frequency applications,
while 4H-Semi SiC is semi-insulating with varying doping levels, designed for applications needing electrical insulation.
2. Q: How does the thermal conductivity of 4H-N SiC compare to other semiconductors?
A: 4H-N SiC has higher thermal conductivity than many other semiconductors, which helps in better heat dissipation and thermal management.
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4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type Prime Grade Dummy Grade Thickness 350um Customized Images
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